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| SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS ISSUE 2 OCTOBER 1995 FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps PARTMARKING DETAILS DEVICE TYPE IN FULL COMPLEMENTARY TYPES FZT955 - FZT855 FZT956 - N/A FZT955 FZT956 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg -10 -4 3 -55 to +150 FZT955 -180 -140 -6 -5 -2 FZT956 -220 -200 UNIT V V V A A W C *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum 3 - 284 FZT955 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO MIN. -180 -180 -140 -6 TYP. -210 -210 -170 -8 -50 -1 -50 -1 -10 -30 -70 -110 -275 -970 -830 100 100 75 200 200 140 10 110 40 68 1030 -60 -120 -150 -370 -1110 -950 MAX. UNIT CONDITIONS. V V V V nA IC=-100A IC=-1A, RB 1k IC=-10mA* IE=-100A VCB=-150V VCB=-150V,Tamb=100C VCB=-150V VCB=-150V,Tamb=100C VEB=-6V IC=-100mA, IB=-5mA* IC=-500mA,IB=-50mA* IC=-1A, IB=-100mA* IC=-3A, IB=-300mA* IC=-3A, IB=-300mA* I+ =-3A, VCE=-5V* IC=-10mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-3A, VCE=-5V* IC=-10A, VCE=-5V* MHz IC=-100mA, VCE=-10V f=50MHz pF ns ns VCB=-20V, f=1MHz IC=-1A, IB1=-100mA IB2=100mA, VCC=-50V A Collector Cut-Off Current ICER R 1k IEBO VCE(sat) A nA Emitter Cut-Off Current Collector-Emitter Saturation Voltage nA mV mV mV mV mV mV Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio VBE(sat) VBE(on) hFE 300 Transition Frequency Output Capacitance Switching Times fT Cobo ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 285 FZT955 TYPICAL CHARACTERISTICS 1.6 1.4 IC/IB=50 IC/IB=10 Tamb=25C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.1 1 10 20 0 0.001 0.01 0.1 1 10 20 -55C +25C +175C IC/IB=10 VCE(sat) - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 IC - Collector Current (Amps) VCE(sat) - (Volts) IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 hFE - Normalised Gain 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 +100C +25C -55C VCE=5V 300 1.6 1.4 -55C +25C +100C +175C IC/IB=10 hFE - Typical Gain VBE(sat) - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 200 100 0.01 0.1 1 10 20 0 0.001 0.01 0.1 1 10 20 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC 10 -55C +25C +100C +175C VBE(sat) v IC Single Pulse Test at Tamb=25C 1.6 1.4 VCE=5V IC - Collector Current (Amps) VBE - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 1 0.1 D.C. 1s 100ms 10ms 1.0ms 0.1ms 0.01 1 10 100 1000 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3 - 286 FZT956 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO V(BR)CER V(BR)CEO V(BR)EBO ICBO MIN. -220 -220 -200 -6 TYP. -300 -300 -240 -8 -50 -1 -50 -1 -10 -30 -120 -168 -970 -810 100 100 50 200 200 150 10 110 32 67 1140 -50 -165 -275 -1110 -950 MAX. UNIT CONDITIONS. V V V V nA IC=-100A IC=-1A, RB 1k IC=-10mA* IE=-100A VCB=-200V VCB=-200V,Tamb=100C VCB=-200V VCB=-200V,Tamb=100C VEB=-6V IC=-100mA,IB=-10mA* IC=-1A, IB=-100mA* IC=-2A, IB=-400mA* IC=-2A, IB=-400mA IC=-2A, VCE=-5V* IC=-10mA, VCE=-5V* IC=-1A, VCE=-5V* IC=-2A, VCE=-5V* IC=-5A, VCE=-5V* MHz pF ns ns IC=-100mA, VCE=-10V f=50MHz VCB=-20V, f=1MHz IC=-1A, IB1=-100mA IB2=100mA, VCC=-50V A Collector Cut-Off Current ICER R 1k IEBO VCE(sat) A nA Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio nA mV mV mV mV mV VBE(sat) VBE(on) hFE 300 Transition Frequency Output Capacitance Switching Times fT Cobo ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% Spice parameter data is available upon request for this device 3 - 287 FZT956 TYPICAL CHARACTERISTICS Ta mb=25C 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 IC/IB=50 1.6 IC/IB=10 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 -55C +25C +175C IC/IB=10 - (Volts) V V 10 20 - (Volts) 0 0.001 0.01 0.1 1 10 20 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 +100C +25C -55C VCE=1V 300 1.6 -55C +25C +100C +175C IC/IB=10 - Normalised Gain - Typical Gain 1.4 - (Volts) V 1.2 1.0 0.8 0.6 200 h 100 0.4 0.2 h 0.001 0.01 0.1 1 10 20 0 0.001 0.01 0.1 1 10 20 I+ - Collector Current (Amps) I+ - Collector Current (Amps) hFE v IC 10 VCE=1V VBE(sat) v IC Single Pulse Test Tamb=25C 1.6 1.4 -55C +25C +100C +175C - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 1 DC 1s 100ms 10ms 1ms 100s 0.1 V 0 0.01 0.001 0.01 0.1 1 10 20 1 10 100 1000 I+ - Collector Current (Amps) VCE - Collector Voltage (V) VBE(on) v IC Safe Operating Area 3 - 288 |
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